Publications in OpenAlex of which a co-author is affiliated to this organization
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| Title | DOI |
|---|---|
| https://doi.org/10.1063/5.0060327 | β-Gallium oxide power electronics |
| https://doi.org/10.1161/circulationaha.117.030742 | Single-Cell Sequencing of the Healthy and Diseased Heart Reveals Cytoskeleton-Associated Protein 4 as a New Modulator of Fibroblasts Activation |
| https://doi.org/10.1109/ted.2017.2706090 | “Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs |
| https://doi.org/10.1016/j.rse.2014.11.014 | Advanced radiometry measurements and Earth science applications with the Airborne Prism Experiment (APEX) |
| https://doi.org/10.1109/ted.2017.2728785 | Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs |
| https://doi.org/10.1109/ted.2014.2386391 | Temperature-Dependent Dynamic <inline-formula> <tex-math notation="LaTeX">$R_{\mathrm {\mathrm{{\scriptstyle ON}}}}$ </tex-math></inline-formula> in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage |
| https://doi.org/10.1109/ispsd.2015.7123383 | On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices |
| https://doi.org/10.1109/ted.2018.2877262 | Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors |
| https://doi.org/10.1016/j.mssp.2017.10.009 | Trapping phenomena and degradation mechanisms in GaN-based power HEMTs |
| https://doi.org/10.1109/ispsd.2018.8393658 | An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology |
| https://doi.org/10.1109/ispsd.2014.6856054 | An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric |
| https://doi.org/10.1002/bit.26539 | From lab to market: An integrated bioprocess design approach for new‐to‐nature biosurfactants produced by Starmerella bombicola |
| https://doi.org/10.1109/jproc.2014.2355872 | Textile Antennas as Hybrid Energy-Harvesting Platforms |
| https://doi.org/10.1109/tie.2017.2719599 | Short-Circuit Study in Medium-Voltage GaN Cascodes, p-GaN HEMTs, and GaN MISHEMTs |
| https://doi.org/10.1109/tpel.2015.2433017 | Analytical Switching Loss Model for Superjunction MOSFET With Capacitive Nonlinearities and Displacement Currents for DC–DC Power Converters |
| https://doi.org/10.1109/iedm.2015.7409831 | Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs |
| https://doi.org/10.1089/scd.2018.0061 | Equine Allogeneic Chondrogenic Induced Mesenchymal Stem Cells Are an Effective Treatment for Degenerative Joint Disease in Horses |
| https://doi.org/10.1109/apec42165.2021.9487430 | Monolithic Integration of a 5-MHz GaN Half-Bridge in a 200-V GaN-on-SOI Process: Programmable dv/dt Control and Floating High-Voltage Level-Shifter |
| https://doi.org/10.1186/s13613-023-01177-y | Multidisciplinary expert panel report on fluid stewardship: perspectives and practice |
| https://doi.org/10.1007/s00134-025-08058-x | European Society of Intensive Care Medicine Clinical Practice Guideline on fluid therapy in adult critically ill patients: Part 3—fluid removal at de-escalation phase |
| https://doi.org/10.1109/led.2015.2442293 | Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors |
| https://doi.org/10.1109/ted.2004.834913 | Hot Hole Degradation Effects in Lateral nDMOS Transistors |
| https://doi.org/10.1109/relphy.2007.369940 | A Comprehensive Model for Hot Carrier Degradation in LDMOS Transistors |
| https://doi.org/10.1109/led.2017.2665163 | P-GaN HEMTs Drain and Gate Current Analysis Under Short-Circuit |
| https://doi.org/10.3389/fvets.2017.00158 | Tenogenically Induced Allogeneic Peripheral Blood Mesenchymal Stem Cells in Allogeneic Platelet-Rich Plasma: 2-Year Follow-up after Tendon or Ligament Treatment in Horses |
| https://doi.org/10.1109/irps.2018.8353582 | On the origin of the leakage current in p-gate AlGaN/GaN HEMTs |
| https://doi.org/10.1109/ispsd.2019.8757667 | Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs |
| https://doi.org/10.1109/ted.2007.896597 | Compact Modeling of Lateral Nonuniform Doping in High-Voltage MOSFETs |
| https://doi.org/10.1364/ao.51.006259 | Tunable acousto-optic spectral imager for atmospheric composition measurements in the visible spectral domain |
| https://doi.org/10.1109/test.2014.7035281 | Practical random sampling of potential defects for analog fault simulation |
| https://doi.org/10.1109/te.2008.924213 | Web-Based Trainer for Electrical Circuit Analysis |
| https://doi.org/10.1109/ted.2015.2455072 | Origin of Anomalous <inline-formula> <tex-math notation="LaTeX">$C_{\mathrm {OSS}}$ </tex-math></inline-formula> Hysteresis in Resonant Converters With Superjunction FETs |
| https://doi.org/10.1109/ted.2010.2059632 | on-State Hot Carrier Degradation in Drain-Extended NMOS Transistors |
| https://doi.org/10.1080/01431161.2014.883098 | The PROBA-V mission: the space segment |
| https://doi.org/10.1063/1.5109301 | Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress |
| https://doi.org/10.1109/tdmr.2021.3080585 | Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs |
| https://doi.org/10.1109/mias.2013.2288403 | The Efficiency of Hybrid Stepping Motors: Analyzing the Impact of Control Algorithms |
| https://doi.org/10.1109/ispsd.2016.7520782 | First experimental demonstration of solid state circuit breaker (SSCB) using 650V GaN-based monolithic bidirectional switch |
| https://doi.org/10.1109/ted.2016.2645279 | Lateral Charge Transport in the Carbon-Doped Buffer in AlGaN/GaN-on-Si HEMTs |
| https://doi.org/10.1063/1.4962314 | Impact of Ti/Al atomic ratio on the formation mechanism of non-recessed Au-free Ohmic contacts on AlGaN/GaN heterostructures |
| https://doi.org/10.1109/ispsd46842.2020.9170097 | A Charge-to-Breakdown (QBD) Approach to SiC Gate Oxide Lifetime Extraction and Modeling |
| https://doi.org/10.1109/ted.2018.2880952 | <inline-formula> <tex-math notation="LaTeX">${C}_{\textsf{OSS}}$ </tex-math> </inline-formula> Measurements for Superjunction MOSFETs: Limitations and Opportunities |
| https://doi.org/10.1109/iedm.2015.7409633 | Numerical investigation of the lateral and vertical leakage currents and breakdown regimes in GaN-on-Silicon vertical structures |
| https://doi.org/10.1109/tpel.2022.3158655 | An Integrated GaN Overcurrent Protection Circuit for Power HEMTs Using SenseHEMT |
| https://doi.org/10.1117/1.oe.60.5.055106 | Stray light control and analysis for an off-axis three-mirror anastigmat telescope |
| https://doi.org/10.1016/j.microrel.2020.113841 | OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution |
| https://doi.org/10.1109/ted.2021.3063062 | Small- and Large-Signal Dynamic Output Capacitance and Energy Loss in GaN-on-Si Power HEMTs |
| https://doi.org/10.7567/jjap.55.01ad04 | High voltage trapping effects in GaN-based metal–insulator–semiconductor transistors |
| https://doi.org/10.1109/test.2016.7805829 | Analog fault coverage improvement using final-test dynamic part average testing |
| https://doi.org/10.23919/ispsd.2017.7988902 | Negative dynamic Ron in AlGaN/GaN power devices |
| https://doi.org/10.1063/5.0057285 | Non-monotonic threshold voltage variation in 4H-SiC metal–oxide–semiconductor field-effect transistor: Investigation and modeling |
| https://doi.org/10.1109/therminic.2008.4669912 | Practical chip-centric electro-thermal simulations |
| https://doi.org/10.1109/test.2014.7035330 | Design and test of analog circuits towards sub-ppm level |
| https://doi.org/10.1109/led.2009.2014473 | A New Method to Improve Tradeoff Performance for Advanced Power MOSFETs |
| https://doi.org/10.1109/jestpe.2020.3034345 | Origins of Soft-SwitchingCossLosses in SiC Power MOSFETs and Diodes for Resonant Converter Applications |
| Towards a universal model for hot carrier degradation in DMOS transistors | |
| https://doi.org/10.1016/j.microrel.2018.06.037 | Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors |
| https://doi.org/10.1016/j.microrel.2019.06.026 | ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping |
| https://doi.org/10.1109/ispsd.2016.7520876 | AlGaN/GaN power device technology for high current (100+ A) and high voltage (1.2 kV) |
| https://doi.org/10.1109/irps.2017.7936307 | GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift |
| https://doi.org/10.4103/ams.ams_135_20 | Guidelines for the use of resection guides for subperiosteal maxillary implants in cases of terminal dentition - A novel approach |
| https://doi.org/10.1109/ispsd.2012.6229017 | A HfO<inf>2</inf> based 800V/300°C Au-free AlGaN/GaN-on-Si HEMT technology |
| https://doi.org/10.1109/apec.2017.7931130 | Series-connected GaN transistors for ultra-fast high-voltage switch (>1kV) |
| https://doi.org/10.1109/apec48139.2024.10509140 | Deep Investigation on SiC MOSFET Degradation under Gate Switching Stress and Application Switching Stress |
| https://doi.org/10.1109/tcad.2023.3244892 | Boosting Latent Defect Coverage in Automotive Mixed-Signal ICs Using SVM Classifiers |
| https://doi.org/10.1109/irps48228.2024.10529435 | On the Intrinsic and Extrinsic Reliability Challenges of SiC MOSFETs |
| https://doi.org/10.1063/5.0006003 | Formation and preferential orientation of Au-free Al/Ti-based ohmic contacts on different hexagonal nitride-based heterostructures |
| https://doi.org/10.1016/j.mssp.2024.108389 | Origin and Recovery of Negative VTH Shift on 4H–SiC MOS Capacitors: An Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements |
| https://doi.org/10.1002/mdc3.13253 | Reversible Drug‐Induced Pisa Syndrome Due to a Cholinesterase Inhibitor |
| https://doi.org/10.1117/12.2690839 | Copernicus CO2M: status of the mission for monitoring anthropogenic carbon dioxide from space |
| https://doi.org/10.1117/12.2689672 | ALTIUS instrument: a study of scattering effects |
| https://doi.org/10.4028/p-cb1krz | A Unique Failure Mode of SiC MOSFETs under Accelerated HTRB |
| https://doi.org/10.1117/1.oe.63.12.124101 | Stray light correction method for telescopes with linear detector arrays in push-broom configuration: application to CO2M-CLIM |
| https://doi.org/10.1186/s12893-025-02938-1 | Prediction of surgical resectability after FOLFIRINOX chemotherapy for borderline resectable and locally advanced pancreatic cancer (PeRFormanCe): a multicenter prospective trial - trial protocol |
| https://doi.org/10.1093/asjof/ojaf130 | Synergistic Effects of Autologous Plasma and Agarose Fillers in Treating Acne, Atrophic, and Hypertrophic Scars: A Case Series |
| https://doi.org/10.1111/jocd.70487 | Improved Periorbital Satisfaction After Combined Mid and Upper Facial Treatment With Hyaluronic Acid Fillers and |
| https://doi.org/10.1109/23.159682 | A 1006 element hybrid silicon pixel detector with strobed binary output |
| https://doi.org/10.1109/iedm.2006.346933 | XtreMOS : The First Integrated Power Transistor Breaking the Silicon Limit |
| https://doi.org/10.1016/j.sse.2006.09.002 | Scalable general high voltage MOSFET model including quasi-saturation and self-heating effects |
| https://doi.org/10.1109/temc.2012.2193888 | Characterizing the TEM Cell Electric and Magnetic Field Coupling to PCB Transmission Lines |
| https://doi.org/10.1002/term.1533 | Low-amplitude high frequency vibration down-regulates myostatin and atrogin-1 expression, two components of the atrophy pathway in muscle cells |
| https://doi.org/10.1109/isqed.2003.1194771 | Automatic repositioning technique for digital cell based window comparators and implementation within mixed-signal DfT schemes |
| https://doi.org/10.1016/j.sse.2007.09.024 | An EKV-based high voltage MOSFET model with improved mobility and drift model |
| https://doi.org/10.1109/ispsd.2011.5890851 | UltiMOS: A local charge-balanced trench-based 600V super-junction device |
| https://doi.org/10.1109/irps.2019.8720549 | $\mu s$-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate |
| https://doi.org/10.1109/essder.2004.1356565 | The 1/f noise versus sheet resistance in poly-Si is similar to poly-SiGe resistors and Au-layers |
| https://doi.org/10.1109/ted.2004.829518 | Plasma-Charging Damage of Floating MIM Capacitors |
| https://doi.org/10.1109/ted.2018.2881325 | The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors |
| https://doi.org/10.1109/compel.2019.8769661 | An Investigation into the Causes of COSS Losses in GaN-on-Si HEMTs |
| https://doi.org/10.1109/vts.2015.7116275 | Automated testing of mixed-signal integrated circuits by topology modification |
| https://doi.org/10.1109/itc44170.2019.9000123 | Applying Vstress and defect activation coverage to produce zero-defect mixed-signal automotive ICs |
| https://doi.org/10.1109/apec.2014.6803300 | Internal self-damping optimization in trench power FETs for high-frequency conversion |
| https://doi.org/10.1109/essder.2005.1546671 | Charge trapping effects and interface state generation in a 40 V lateral resurf pDMOS transistor |
| https://doi.org/10.1109/iedm.2017.8268492 | Total suppression of dynamic-ron in AlGaN/GaN-HEMTs through proton irradiation |
| https://doi.org/10.1109/apec.2018.8341020 | High-accuracy modelling of ZVS energy loss in advanced power transistors |
| https://doi.org/10.1109/ispsd46842.2020.9170100 | Integrated SenseHEMT and Gate-Driver on a 650-V GaN-on-Si Platform Demonstrated in a Bridgeless Totem-pole PFC Converter |
| https://doi.org/10.1109/tim.2021.3057291 | Fully Integrated Flexible Dielectric Monitoring Sensor System for Real-Time In Situ Prediction of the Degree of Cure and Glass Transition Temperature of an Epoxy Resin |
| https://doi.org/10.1109/essderc.2017.8066609 | Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron |
| https://doi.org/10.1109/jestpe.2022.3163646 | On-Chip Dynamic Gate-Voltage Waveform Sampling in a 200-V GaN-on-SOI Power IC |
| https://doi.org/10.1109/ispsd.2012.6229080 | Body-diode related losses in Shield-Plate FETs for SiP 12V-input DC/DC buck converters operating at high-frequency (4MHz) |