Philips (Belgium)

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Title DOI
https://doi.org/10.1111/twec.13030 Patterns of trade restrictiveness in online platforms: A first look
https://doi.org/10.1109/iitc.2005.1499934 Reliability challenges accompanied with interconnect downscaling and ultra low-k dielectrics
https://doi.org/10.1016/j.mee.2004.01.021 Oxide–nitride–oxide layer optimisation for reliable embedded SONOS memories
https://doi.org/10.1109/ted.2005.852723 Simultaneous Extraction of the Base and Thermal Resistances of Bipolar Transistors
https://doi.org/10.1016/j.jpra.2017.01.004 Porcine ear: A new model in large animals for the study of facial subunit allotransplantation
https://doi.org/10.1016/0167-6911(88)90011-4 A numerical method for deadbeat control of generalized state-space systems
https://doi.org/10.1109/ted.2004.829867 A New Trench Bipolar Transistor for RF Applications
https://doi.org/10.1117/12.921295 Optical simulations for Ambilight TV systems
https://doi.org/10.1889/1.3621511 67.3: Perceptually Relevant Characterization of Stereoscopic Displays
https://doi.org/10.1088/0022-3727/49/25/255201 Nonlinear behavior in high-intensity discharge lamps
https://doi.org/10.1063/1.1578512 Boron uphill diffusion during ultrashallow junction formation
https://doi.org/10.1109/jsac.1986.1146398 Computable Bounds for Conditional Steady-State Probabilities in Large Markov Chains and Queueing Models
https://doi.org/10.1109/bipol.2002.1042918 QUBiC4G: a f/sub T//f/sub max/ = 70/100 GHz 0.25 μm low power SiGe-BiCMOS production technology with high quality passives for 12.5 Gb/s optical networking and emerging wireless applications up to 20 GHz
https://doi.org/10.1109/tassp.1985.1164645 A generalization of the Levinson algorithm for Hermitian Toeplitz matrices with any rank profile
https://doi.org/10.1109/tcs.1981.1085067 A two-variable approach to the model reduction problem with Hankel norm criterion
https://doi.org/10.1016/0950-7051(88)90031-7 Declarative approach to information systems requirements
https://doi.org/10.1109/iedm.2001.979486 Gate current: Modeling, ΔL extraction and impact on RF performance
https://doi.org/10.1016/0024-3795(90)90144-2 Rational and polynomial matrix factorizations via recursive pole-zero cancellation
https://doi.org/10.1063/1.1751225 Boron diffusion in amorphous silicon and the role of fluorine
https://doi.org/10.1557/proc-810-c3.6 Current Understanding and Modeling of B Diffusion and Activation Anomalies in Preamorphized Ultra-Shallow Junctions
https://doi.org/10.1016/0024-3795(87)90031-0 On Kogbetliantz's SVD Algorithm in the Presence of Clusters
https://doi.org/10.1109/bipol.2004.1365788 QUBiC4X: An f/sub T//f/sub max/ = 130/140GHz SiGe:C-BiCMOS manufacturing technology witg elite passives for emerging microwave applications
https://doi.org/10.1109/bipol.2005.1555249 QUBIC4plus: a cost-effective BiCMOS manufacturing technology with elite passive enhancements optimized for 'silicon-based' RF-system-in-package environment
https://doi.org/10.1109/tassp.1980.1163465 A simple proof of Rudin's multivariable stability theorem
https://doi.org/10.1109/essderc.2003.1256799 Elimination of accumulation charge effects for high-resistive silicon substrates
https://doi.org/10.1109/tpami.1982.4767229 Statistical Properties of Error Estimators in Performance Assessment of Recognition Systems
https://doi.org/10.1016/j.mee.2004.07.017 Etch and strip induced material modification of porous low-k (k=2.2) dielectric
https://doi.org/10.1121/1.393685 Wave equations in linear viscoelastic materials
https://doi.org/10.1007/bf01195921 Factorization of a rational matrix: The singular case
https://doi.org/10.1109/tit.1986.1057230 Bounds for codes over the unit circle
https://doi.org/10.1149/1.1803571 HfSiO[sub 4] Dielectric Layers Deposited by ALD Using HfCl[sub 4] and NH[sub 2](CH[sub 2])[sub 3]Si(OC[sub 2]H[sub 5])[sub 3] Precursors
https://doi.org/10.1109/tit.1980.1056210 Half-plane Toeplitz systems
https://doi.org/10.1016/j.mseb.2005.08.079 Boron diffusion in amorphous silicon
https://doi.org/10.1016/0165-1684(91)90062-n An accurate product SVD algorithm
https://doi.org/10.1007/bf01934924 Deadbeat control: A special inverse eigenvalue problem
https://doi.org/10.1109/essder.2005.1546645 On the scalability of source/drain current enhancement in thin film sSOI
https://doi.org/10.1557/proc-765-d7.5 Silicides for 65 nm CMOS and Beyond
https://doi.org/10.1007/3-540-39568-7_28 Dependence of output on input in DES: Small avalanche characteristics
https://doi.org/10.1016/j.apsusc.2004.03.184 Effects of crystalline regrowth on dopant profiles in preamorphized silicon
https://doi.org/10.1016/s0019-9958(81)90645-8 Spectral enumerators for certain additive-error-correcting codes over integer alphabets
https://doi.org/10.1109/.2005.1469212 A low-cost 90nm RF-CMOS platform for record RF circuit performance
https://doi.org/10.1063/1.2203334 Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth
https://doi.org/10.1016/0024-3795(85)90094-1 On polyhedra of Perron-Frobenius eigenvectors
https://doi.org/10.1109/led.2006.886414 CMOS Integration of Dual Work Function Phase-Controlled Ni Fully Silicided Gates (NMOS:NiSi, PMOS:$\hbox{Ni}_{2}\hbox{Si}$, and $\hbox{Ni}_{31}\hbox{Si}_{12}$) on HfSiON
https://doi.org/10.1109/tac.1981.1102703 On the existence of a negative semidefinite, antistabilizing solution to the discrete-time algebraic Riccati equation
https://doi.org/10.1109/tsm.2004.826998 Test Structure Design Considerations for RF-CV Measurements on Leaky Dielectrics
https://doi.org/10.1016/s0167-9317(02)00768-2 Characterisation and integration feasibility of JSR’s low-k dielectric LKD-5109
https://doi.org/10.1137/0145037 Discrete Prolate Spheroidal Wave Functions and Interpolation
https://doi.org/10.1016/j.microrel.2004.11.050 Performance improvement of self-aligned HfO2/TaN and SiON/TaN nMOS transistors
https://doi.org/10.1103/physrevb.69.125215 Radiation-enhanced diffusion of Sb and B in silicon during implantation below400°C
https://doi.org/10.1109/ted.2004.832104 Defect Generation Statistics in Thin Gate Oxides
https://doi.org/10.1016/j.mee.2006.09.013 Cu surface treatment influence on Si adsorption properties of CuSiN self-aligned barriers for sub-65nm technology node
https://doi.org/10.1109/vlsit.2004.1345416 Integration of a 90nm RF CMOS technology (200GHz f/sub max/ - 150GHz f/sub T/ NMOS) demonstrated on a 5GHz LNA
https://doi.org/10.1016/j.mee.2006.10.021 Chemical etching solutions for air gap formation using a sacrificial oxide/polymer approach
https://doi.org/10.1016/s0169-4332(02)00688-8 TOF-SIMS as a rapid diagnostic tool to monitor the growth mode of thin (high k) films
https://doi.org/10.1016/0005-1098(84)90065-7 Linear time-variable systems: Stability of reduced models
https://doi.org/10.1109/essderc.2003.1256855 Experimental investigation of the impact of line-edge roughness on MOSFET performance and yield
https://doi.org/10.1007/3-540-39799-x_43 The Importance of “Good” Key Scheduling Schemes (How to Make a Secure DES* Scheme with ≤ 48 Bit Keys?)
https://doi.org/10.1063/1.1852728 Role of silicon interstitials in boron cluster dissolution
https://doi.org/10.1109/intlec.1993.388488 High frequency ZVS for high power rectifiers
https://doi.org/10.1109/iedm.2004.1419144 Demonstration of an extendable and industrial 300mm BEOL integration for the 65-mn technology node
https://doi.org/10.1016/s0026-2714(01)00073-7 Flat band voltage shift and oxide properties after rapid thermal annealing
https://doi.org/10.1016/s0195-6698(88)80019-2 Some Bounds for the Distribution Numbers of an Association Scheme
https://doi.org/10.1007/s00259-009-1164-3 Optimization of time-of-flight reconstruction on Philips GEMINI TF
https://doi.org/10.1016/j.mseb.2004.07.047 Accurate electrical activation characterization of CMOS ultra-shallow profiles
https://doi.org/10.1116/1.2044813 Impurity redistribution due to recrystallization of preamorphized silicon
https://doi.org/10.1109/icassp.1985.1168285 Speaker dependent connected speech recognition via phonetic Markov models
https://doi.org/10.1149/1.2216455 Effect of Nitridation on Low-Frequency (1/f) Noise in n- and p-MOSFETS with HFO[sub 2] Gate Dielectrics
https://doi.org/10.1016/j.mseb.2005.08.127 Boron diffusion in strained and strain-relaxed SiGe
https://doi.org/10.1109/iit.2002.1257928 Optimizing p-type ultra-shallow junctions for the 65 nm CMOS technology node
https://doi.org/10.1149/1.1574652 Physical and Electrical Properties of Zr-Silicate Dielectric Layers Deposited by Atomic Layer Deposition
https://doi.org/10.1149/1.1768547 ALD of Ta(Si)N Thin Films Using TDMAS as a Reducing Agent and as a Si Precursor
The impact of substrate resistivity on ESD protection devices
https://doi.org/10.1109/essderc.2003.1256822 The effect of copper design rules on inductor performance
https://doi.org/10.1016/j.mssp.2004.09.012 Preparation of SrRuO3 films for advanced CMOS metal gates
https://doi.org/10.1016/s0169-4332(02)00691-8 Quantitative depth profiling of SiOxNy layers on Si
https://doi.org/10.1063/1.1622556 Carrier Illumination as a tool to probe implant dose and electrical activation
https://doi.org/10.1109/tc.1980.1675631 Complex Number Arithmetic with Odd- Valued Logic
https://doi.org/10.1117/12.597406 Aberration retrieval for high-NA optical systems using the extended Nijboer-Zernike theory
https://doi.org/10.1016/j.elstat.2004.02.004 Punch-through diodes as replacement for low-voltage Zener diodes in ESD protection circuits
https://doi.org/10.1149/1.1595663 In-Line Electrical Metrology for High-K Gate Dielectrics Deposited by Atomic Layer CVD
https://doi.org/10.1109/led.2006.870252 Yb-doped Ni FUSI for the n-MOSFETs gate electrode application
https://doi.org/10.1080/02678290412331315995 STN-gels in fast passive matrix displays
https://doi.org/10.1007/bf01599216 Parametric toeplitz systems
https://doi.org/10.1109/ted.2004.831959 Impact of Correlated Generation of Oxide Defects on SILC and Breakdown Distributions
https://doi.org/10.1109/ted.2005.857176 Analysis of the Kirk Effect in Silicon-Based Bipolar Transistors With a Nonuniform Collector Profile
https://doi.org/10.1109/iitc.2003.1219714 General review of issues and perspectives for advanced copper interconnections using air gap as ultra-low K material
https://doi.org/10.1109/iitc.2006.1648685 The Impact of Back-End-of-Line Process Variations on Critical Path Timing
https://doi.org/10.1117/12.590172 <title>Lightsources for small-etendue applications: a comparison of xenon and UHP lamps</title>
https://doi.org/10.1109/ted.2005.846349 Experimental Characterization of Statistically Independent Defects in Gate Dielectrics—Part I: Description and Validation of the Model
https://doi.org/10.1109/ispsd.2006.1666137 Novel power transistor design for a process independent high voltage option in standard CMOS
https://doi.org/10.1109/wct.2004.240356 Electrical characterisation of vertical vapor phase doped (VPD) RESURF MOSFETs
https://doi.org/10.1109/iitc.2006.1648653 Self Aligned Barrier Approach: Overview on Process, Module Integration and Interconnect Performance Improvement Challenges
https://doi.org/10.1109/iitc.2005.1499976 An analysis of the effect of wire resistance on circuit level performance at the 45-nm technology node
https://doi.org/10.1117/12.474523 Characterization of a projection lens using the extended Nijboer-Zernike approach
https://doi.org/10.1063/1.4789598 Transition between breakdown regimes in a temperature-dependent mixture of argon and mercury using 100 kHz excitation
https://doi.org/10.1063/1.123499 Silicon-based resonant-cavity-enchanced photodiode with a buried SiO2 reflector
https://doi.org/10.1109/iitc.2005.1499997 Air gap integration for the 45nm node and beyond
https://doi.org/10.1143/jjap.42.912 Advanced Signal Processing for the Blu-ray Disc System
https://doi.org/10.1063/1.2339049 Charge trapping in nitrided HfSiO gate dielectric layers