NXP (Belgium)

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Title DOI
https://doi.org/10.1016/j.mee.2007.04.119 The evolution of multi-level air gap integration towards 32 nm node interconnects
https://doi.org/10.1109/iedm.2006.346823 Experimental Extraction of the Charge Centroid and of the Charge Type in the P/E Operation of Sonos Memory Cells
https://doi.org/10.1109/iedm.2009.5424419 Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs
https://doi.org/10.1109/memsys.2008.4443777 Wafer level encapsulation technology for MEMS devices using an HF-permeable PECVD SIOC capping layer
https://doi.org/10.1109/ispsd.2008.4538951 Innovative lateral field plates by gate fingers on STI regions in deep submicron CMOS
https://doi.org/10.1109/iedm.2010.5703442 Phase change memory line concept for embedded memory applications
https://doi.org/10.1007/978-3-662-45611-8_19 Mersenne Factorization Factory
https://doi.org/10.1109/ted.2007.896324 Experimental Investigation of Optimum Gate Workfunction for CMOS Four-Terminal Multigate MOSFETs (MUGFETs)
https://doi.org/10.1016/j.sse.2007.09.035 Power Trench MOSFETs with very low specific on-resistance for 25V applications
https://doi.org/10.1109/irws.2007.4469225 Electromigration multistress pattern technique for copper drift velocity and Black’s parameters extraction
https://doi.org/10.1017/9781316271575.003 Montgomery Arithmetic from a Software Perspective
https://doi.org/10.1109/transducers.2013.6626888 High precision frequency synthesizer based on MEMS piezoresistive resonator
https://doi.org/10.1016/j.mee.2007.04.033 Independent double-gate FinFETs with asymmetric gate stacks
https://doi.org/10.1557/proc-1070-e02-01 Ion implantation for low-resistive source/drain contacts in FinFET devices
https://doi.org/10.1109/icassp40776.2020.9053359 Least-Squares DOA Estimation with an Informed Phase Unwrapping and Full Bandwidth Robustness
https://doi.org/10.1109/icspcc.2012.6335733 An optimized parametric model for the simulation of reverberant microphone signals
https://doi.org/10.1109/ulis.2008.4527143 Simulation of self-heating effects in 30nm gate length FinFET
https://doi.org/10.1109/transducers.2013.6627101 A low-power CMOS integrated sensor for CO<inf>2</inf> detection in the percentage range
https://doi.org/10.1117/12.813736 Fluorinated polymethacrylates as highly sensitive non-chemically amplified e-beam resists
https://doi.org/10.1155/2017/6158689 A 7 μW Offset- and Temperature-Compensated pH-to-Digital Converter
https://doi.org/10.1109/vtsa.2009.5159289 A VFB tunable Single Metal Single Dielectric approach using As I/I into TiN/HfO2 for 32nm node and beyond
https://doi.org/10.1109/vtsa.2010.5488925 Multi-V<inf>T</inf> engineering in highly scaled CMOS bulk and FinFET devices through Ion Implantation into the metal gate stack featuring a 1.0nm EOT high-K oxide
https://doi.org/10.1109/ted.2010.2045669 Investigation of Back-Bias Capacitance Coupling Coefficient Measurement Methodology for Floating-Gate Nonvolatile Memory Cells
https://doi.org/10.1109/iitc.2007.382372 Balancing Resistance and Capacitance of Signal Interconnects for Power Saving
https://doi.org/10.1109/hscma.2017.7895571 Two-stage speech enhancement with manipulation of the cepstral excitation
https://doi.org/10.1007/s13389-021-00276-5 Optimized threshold implementations: securing cryptographic accelerators for low-energy and low-latency applications
https://doi.org/10.1109/ispsd.2019.8757597 Power Challenges Caused by IOT Edge Nodes: Securing and Sensing Our World
https://doi.org/10.1109/vtsa.2008.4530845 Conformal Doping of FINFET's: A Fabrication and Metrology Challenge
https://doi.org/10.1109/iedm.2013.6724577 The safe operating volume as a general measure for the operating limits of LDMOS transistors
https://doi.org/10.1109/nvsmw.2008.18 Scaling Properties of Doped Sb2Te Phase Change Line Cells
https://doi.org/10.1109/sips.2016.12 TouchSpeaker, a Multi-Sensor Context-Aware Application for Mobile Devices
https://doi.org/10.1016/j.worlddev.2021.105487 Economic, pro-social and pro-environmental factors influencing participation in an incentive-based conservation program in Bolivia
https://doi.org/10.1017/9781108854207.006 Lattice-Based Integer Factorisation: An Introduction to Coppersmith’s Method
https://doi.org/10.1109/bctm.2012.6352637 Fast noise prediction for process optimization using only standard DC and S-parameter measurements
https://doi.org/10.1109/bctm.2011.6082771 Extended high voltage HBTs in a high-performance BiCMOS process
https://doi.org/10.1109/led.2010.2066953 A Novel Method for Extracting the Temperature-Dependent Crystal-Growth Parameters in Fast-Growth Phase-Change Memories
https://doi.org/10.4018/978-1-7998-7367-9 Strategic Approaches to Digital Platform Security Assurance
https://doi.org/10.1017/9781108854207.008 RSA, DH and DSA in the Wild
https://doi.org/10.1109/tnano.2024.3361718 Stochastic Aware Modeling of Voltage Controlled Magnetic Anisotropy MRAM
https://doi.org/10.1007/978-3-319-01080-9_2 A Piezo-resistive, Temperature Compensated, MEMS-Based Frequency Synthesizer
https://doi.org/10.1109/bctm.2014.6981280 An SiGe heterojunction bipolar transistor with very high open-base breakdown voltage
https://doi.org/10.1109/ispsd.2013.6694465 Integrated heat sinks for SOI power devices
https://doi.org/10.1109/ispec54162.2022.10033036 Unsupervised, Federated and Privacy-Preserving Detection of Anomalous Electricity Consumption in Real-World Scenarios
https://doi.org/10.1117/12.713914 A litho-only approach to double patterning
https://doi.org/10.1109/iedm.2007.4419029 A Novel Fully Self-Aligned SiGe:C HBT Architecture Featuring a Single-Step Epitaxial Collector-Base Process
https://doi.org/10.1109/bctm.2012.6352624 Temperature and geometry dependence of the electrothermal instability of bipolar transistors
https://doi.org/10.23919/eusipco.2017.8081201 New insights into the role of the head radius in model-based binaural speaker localization
https://doi.org/10.1109/gsmm.2019.8797651 Realizing the E-Wall Concept for Indoor 5G
https://doi.org/10.1109/bcicts50416.2021.9682483 The future of SiGe BiCMOS: bipolar amplifiers for high-performance millimeter-wave applications
https://doi.org/10.1007/978-1-4419-5906-5_303 Secure Element
https://doi.org/10.1017/9781108854207.007 Computing Discrete Logarithms
https://doi.org/10.1007/978-3-031-57543-3_5 CAPABARA: A Combined Attack on CAPA
https://doi.org/10.1145/3658644.3670335 Glitch-Stopping Circuits: Hardware Secure Masking without Registers
https://doi.org/10.1017/9781108854207.009 A Survey of Chosen-Prefix Collision Attacks
https://doi.org/10.1109/iedm.2006.346759 Ni-based FUSI gates: CMOS Integration for 45nm node and beyond
https://doi.org/10.1016/j.mee.2008.05.020 Air gap formation by UV-assisted decomposition of CVD material
https://doi.org/10.1016/j.mee.2007.04.074 Reduction of the anomalous VT behavior in MOSFETs with high-κ/metal gate stacks
https://doi.org/10.1016/j.sse.2009.09.014 Improved effective mobility extraction in MOSFETs
https://doi.org/10.1088/0268-1242/23/7/075003 Programme and retention characteristics of SONOS memory arrays with layered tunnel barrier
https://doi.org/10.1109/vlsit.2008.4588557 Novel process to pattern selectively dual dielectric capping layers using soft-mask only
https://doi.org/10.1109/vlsit.2008.4588564 Low VT metal-gate/high-k nMOSFETs &#x2014; PBTI dependence and V<inf>T</inf> Tune-ability on La/Dy-capping layer locations and Laser annealing conditions
https://doi.org/10.1109/isqed.2010.5450523 Novel low-power 12-bit SAR ADC for RFID tags
https://doi.org/10.1063/1.2437064 Impact of Ni-silicide grain orientation on the strain and stress fields induced in patterned silicon
https://doi.org/10.1109/smic.2007.322805 A Novel Isolation Scheme featuring Cavities in the Collector for a High-Speed 0.13μm SiGe:C BiCMOS Technology
https://doi.org/10.1109/rfic.2009.5135529 Scalable CMOS power devices with 70% PAE and 1, 2 and 3.4 Watt output power at 2GHz
https://doi.org/10.1109/ispsd.2007.4294936 Ultra-flexible, layout-enabled field plates for HV transistor integration in SOI-based CMOS
https://doi.org/10.1109/cicc.2007.4405768 Cochlear Implant Signal Processing ICs
https://doi.org/10.1109/transducers.2015.7181000 An integrated carbon dioxide sensor based on ratiometric thermal-conductivity measurement
https://doi.org/10.1117/12.771971 High throughput maskless lithography: low voltage versus high voltage
https://doi.org/10.1016/j.mee.2009.05.019 Evaluation of layered tunnel barrier charge trapping devices for embedded non-volatile memories
https://doi.org/10.1007/978-1-4614-6859-2_7 Signal Processing for Cryptography and Security Applications
https://doi.org/10.1016/j.sse.2007.09.038 Superior N- and P-MOSFET scalability using carbon co-implantation and spike annealing
https://doi.org/10.1557/proc-0994-f11-17 Modeling Ultra Shallow Junctions Formed by Phosphorus-Carbon and Boron-Carbon Co-implantation
https://doi.org/10.1109/bipol.2010.5667966 Layout and spacer optimization for high-frequency low-noise performance in HBT's
https://doi.org/10.1109/ulis.2009.4897532 Accurate effective mobility extraction in SOI MOS transistors
https://doi.org/10.1109/tns.2009.2012860 Dose Enhancement Due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays
https://doi.org/10.1002/pssc.201300144 Characterisation of electrically active defects
https://doi.org/10.1063/1.2967869 Influence of metal capping layer on the work function of Mo gated metal-oxide semiconductor stacks
https://doi.org/10.1109/nvsmw.2007.4290595 New Punch-through Assisted Hot Holes Programming Mechanism for Reliable SONOS FLASH Memories with Thick Tunnel Oxide
https://doi.org/10.1109/bctm.2011.6082745 Virtual technology for RF process and device development
https://doi.org/10.1063/1.4914104 Charge collection microscopy of in-situ switchable PRAM line cells in a scanning electron microscope: Technique development and unique observations
https://doi.org/10.1109/ispsd.2009.5158001 HCI reliability control in HV-PMOS transistors: Conventional EDMOS vs. Dielectric RESURF and lateral field plates
https://doi.org/10.1097/01.aog.0000112921.14894.04 Asymmetric Distribution of Sciatic Nerve Endometriosis
https://doi.org/10.1109/ispsd.2016.7520788 Reverse-biased induced mechanical stress in AlGaN/GaN power diodes
https://doi.org/10.1145/3203217.3206428 Higher order side-channel attack resilient S-boxes
https://doi.org/10.1063/1.3669490 On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors
https://doi.org/10.1088/0953-2048/22/2/025001 Control and readout of current-induced magnetic flux quantization in a superconducting transformer
https://doi.org/10.1116/1.2794738 Evolution of fluorine and boron profiles during annealing in crystalline Si
https://doi.org/10.1116/1.3231481 Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm
https://doi.org/10.1109/ulis.2012.6193379 Efficient DC and AC simulation of nanoelectrode-nanoparticle interactions in capacitive biosensors
https://doi.org/10.1109/ispsd.2012.6229044 Extraction of the electric field in field plate assisted RESURF devices
https://doi.org/10.1149/1.2945870 Low-Voltage Resistive Switching within an Oxygen-Rich Cu/SbTe Interface for Application in Nonvolatile Memory
https://doi.org/10.1109/eusipco.2015.7362827 Speech dereverberation by data-dependent beamforming with signal pre-whitening
https://doi.org/10.1109/irws.2007.4469226 Optimized structure design for wafer level electromigration tests
https://doi.org/10.1007/s11265-017-1302-2 TouchSpeaker, a Multi-sensor Context-Aware Application for Mobile Devices: from Application to Implementation
https://doi.org/10.1007/s12095-018-0345-y Constructions of S-boxes with uniform sharing
https://doi.org/10.1109/iedm19574.2021.9720646 Mm-wave automotive radar: from evolution to revolution
https://doi.org/10.1109/bctm.2012.6352615 Double-polysilicon self-aligned SiGe HBT architecture based on nonselective epitaxy and polysilicon reflow
https://doi.org/10.1109/iedm.2008.4796787 Rapid design flows for advanced technology pathfinding
https://doi.org/10.1109/vtsa.2009.5159292 22nm CMOS approaches by PVD TiN or Ti-Silicide as metal gate