NXP (Belgium)

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Title DOI
https://doi.org/10.1080/13506129.2023.2229484 Patients with transthyretin amyloidosis enrolled in THAOS between 2018 and 2021 continue to experience substantial diagnostic delay
https://doi.org/10.1007/978-3-030-42068-0_2 Optimized Threshold Implementations: Minimizing the Latency of Secure Cryptographic Accelerators
https://doi.org/10.46586/tches.v2023.i3.74-96 Enabling FrodoKEM on Embedded Devices
https://doi.org/10.46586/tches.v2023.i4.262-286 From MLWE to RLWE: A Differential Fault Attack on Randomized & Deterministic Dilithium
https://doi.org/10.46586/tches.v2024.i1.157-179 Who Watches the Watchers: Attacking Glitch Detection Circuits
https://doi.org/10.1109/tetc.2022.3231692 Cyber Resilience for the Internet of Things: Implementations With Resilience Engines and Attack Classifications
https://doi.org/10.1007/978-3-031-54409-5_10 PQ.V.ALU.E: Post-quantum RISC-V Custom ALU Extensions on Dilithium and Kyber
https://doi.org/10.1080/00423114.2024.2389212 A least-squares identification method for vehicle cornering stiffness identification from common vehicle sensor data
https://doi.org/10.1109/icicdt.2008.4567274 New writing mechanism for reliable SONOS embedded memories with thick tunnel oxide
https://doi.org/10.1109/ted.2010.2043396 A Simulation Study of the Punch-Through-Assisted Hot Hole Injection Mechanism for Nonvolatile Memory Cells
https://doi.org/10.1109/ulis.2009.4897559 Carbon-based thermal stabilization techniques for junction and silicide engineering for high performance CMOS periphery in memory applications
https://doi.org/10.1109/nvsmw.2008.27 Low Voltage and Fast Program and Erase SONOS with Thick Tunnel Oxide for Low Cost Embedded EEPROM-like Memory Applications
https://doi.org/10.1109/ted.2023.3289477 Fault Attack Investigation on TaOx Resistive-RAM for Cyber Secure Application
https://doi.org/10.1016/j.sse.2008.09.020 Simulation of self-heating effects in different SOI MOS architectures
https://doi.org/10.1116/1.2816925 Doping fin field-effect transistor sidewalls: Impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance
https://doi.org/10.1007/978-3-540-85209-4_8 A Secure Cross-Layer Protocol for Multi-hop Wireless Body Area Networks
https://doi.org/10.1109/tbcas.2011.2176726 An Ultra Low Energy Biomedical Signal Processing System Operating at Near-Threshold
https://doi.org/10.1109/led.2009.2034117 Matching Performance of FinFET Devices With Fin Widths Down to 10 nm
https://doi.org/10.1109/esscirc.2011.6044961 A precision DTMOST-based temperature sensor
https://doi.org/10.1116/1.3269755 Experimental studies of dose retention and activation in fin field-effect-transistor-based structures
https://doi.org/10.1109/iedm.2007.4419037 Gatestacks for scalable high-performance FinFETs
https://doi.org/10.1016/j.mejo.2010.06.019 0.8 μW 12-bit SAR ADC sensors interface for RFID applications
https://doi.org/10.1109/ted.2010.2068430 FinFET Mismatch in Subthreshold Region: Theory and Experiments
https://doi.org/10.1109/tbme.2008.918576 A Method for the Analysis of Respiratory Sinus Arrhythmia Using Continuous Wavelet Transforms
https://doi.org/10.1109/iedm.2008.4796782 A piezo-resistive resonant MEMS amplifier
https://doi.org/10.1007/s13389-016-0122-9 Computational aspects of correlation power analysis
https://doi.org/10.1007/978-3-319-76953-0_18 Differential Attacks on Deterministic Signatures
https://doi.org/10.1063/1.3033660 Conformal Doping of FINFETs: a Fabrication and Metrology Challenge
https://doi.org/10.1109/iedm.2008.4796662 First observation of FinFET specific mismatch behavior and optimization guidelines for SRAM scaling
https://doi.org/10.1063/1.2822434 Void growth modeling upon electromigration stressing in narrow copper lines
https://doi.org/10.1016/j.sse.2009.09.007 Quantitative prediction of junction leakage in bulk-technology CMOS devices
https://doi.org/10.1007/s10207-013-0220-y Sufficient conditions for sound tree and sequential hashing modes
https://doi.org/10.1109/ted.2016.2623774 Field-Related Failure of GaN-on-Si HEMTs: Dependence on Device Geometry and Passivation
https://doi.org/10.1109/ted.2007.906927 Direct Solution of the Boltzmann Transport Equation and Poisson–SchrÖdinger Equation for Nanoscale MOSFETs
https://doi.org/10.1109/jssc.2016.2587861 A Ratiometric Readout Circuit for Thermal-Conductivity-Based Resistive CO2Sensors
https://doi.org/10.1109/jsen.2017.2711000 P(VDF-HFP) Polymer as Sensing Material for Capacitive Carbon Dioxide Sensors
https://doi.org/10.1016/j.snb.2016.12.023 Dielectric nanocomposite of diphenylethylenediamine and P-type multi-walled carbon nanotube for capacitive carbon dioxide sensors
https://doi.org/10.1109/waspaa.2017.8170040 Low-Complexity Kalman filter for multi-channel linear-prediction-based blind speech dereverberation
https://doi.org/10.1007/978-3-662-53887-6_22 Unknown-Input Attacks in the Parallel Setting: Improving the Security of the CHES 2012 Leakage-Resilient PRF
https://doi.org/10.1109/ispsd.2013.6694460 Design optimization of field-plate assisted RESURF devices
https://doi.org/10.1063/1.3667295 Crystallization properties and their drift dependence in phase-change memory studied with a micro-thermal stage
https://doi.org/10.1109/icassp.2016.7472812 A subjective listening test of six different artificial bandwidth extension approaches in English, Chinese, German, and Korean
https://doi.org/10.46586/tches.v2021.i2.304-327 New First-Order Secure AES Performance Records
https://doi.org/10.1109/taslp.2016.2635022 An Instrumental Quality Measure for Artificially Bandwidth-Extended Speech Signals
https://doi.org/10.1016/j.mejo.2014.09.011 Numerical simulation of the position and orientation effects on the impedance response of nanoelectrode array biosensors to DNA and PNA strands
https://doi.org/10.1109/icassp.2014.6854772 On speech quality assessment of artificial bandwidth extension
https://doi.org/10.1109/ted.2007.901262 Explanation of SILC Probability Density Distributions With Nonuniform Generation of Traps in the Tunnel Oxide of Flash Memory Arrays
https://doi.org/10.1116/1.2789439 Probing doping conformality in fin shaped field effect transistor structures using resistors
https://doi.org/10.1109/essderc.2008.4681766 Improved fin width scaling in fully-depleted FinFETs by source-drain implant optimization
https://doi.org/10.1007/978-3-319-31895-0_2 Privacy and Security in Autonomous Vehicles
https://doi.org/10.1109/tifs.2017.2746058 Private Mobile Pay-TV From Priced Oblivious Transfer
https://doi.org/10.1007/978-3-030-76493-7_4 Internet of Vehicles – System of Systems Distributed Intelligence for Mobility Applications
https://doi.org/10.1109/ted.2009.2021444 Transient Characteristics of the Reset Programming of a Phase-Change Line Cell and the Effect of the Reset Parameters on the Obtained State
https://doi.org/10.1109/arith.2017.15 Fast Arithmetic Modulo 2^x p^y ± 1
https://doi.org/10.1109/iedm.2012.6479036 On the degradation of field-plate assisted RESURF power devices
https://doi.org/10.1143/jjap.51.02bd06 Effect of Resistance Drift on the Activation Energy for Crystallization in Phase Change Memory
https://doi.org/10.1063/1.4908023 Correlative transmission electron microscopy and electrical properties study of switchable phase-change random access memory line cells
https://doi.org/10.1109/ispsd.2016.7520769 Quantitative characterization of the trapped charge profile in GaN HEMTs by sense nodes in the drain-extension region
https://doi.org/10.1017/9781108854207.014 History of Cryptographic Key Sizes
https://doi.org/10.23919/edhpc59100.2023.10396391 EDGX-1: A New Frontier in Onboard AI Computing with a Heterogeneous and Neuromorphic Design
https://doi.org/10.1117/12.712861 A novel method for characterizing resist performance
https://doi.org/10.1109/led.2007.891303 Demonstration of Asymmetric Gate-Oxide Thickness Four-Terminal FinFETs Having Flexible Threshold Voltage and Good Subthreshold Slope
https://doi.org/10.1109/essderc.2008.4681710 Impact of the charge transport in the conduction band on the retention of Si-nitride based memories
https://doi.org/10.1109/ted.2008.918658 Evaluation of Transmission Line Model Structures for Silicide-to-Silicon Specific Contact Resistance Extraction
https://doi.org/10.1109/rfic.2009.5135554 RF reliability of short channel NMOS devices
https://doi.org/10.1016/j.jmig.2007.12.001 Videoregistration of Surgery Should be Used as a Quality Control
https://doi.org/10.1109/vtsa.2008.4530823 Innovative High Voltage transistors for complex HV/RF SoCs in baseline CMOS
https://doi.org/10.1109/icicdt.2008.4567246 Low-voltage 6T FinFET SRAM cell with high SNM using HfSiON/TiN gate stack, fin widths down to 10nm and 30nm gate length
https://doi.org/10.1109/iwaenc.2016.7602929 Partitioned block frequency domain Kalman filter for multi-channel linear prediction based blind speech dereverberation
https://doi.org/10.1016/j.mee.2007.03.009 Vertical poly-Si select pn-diodes for emerging resistive non-volatile memories
https://doi.org/10.1109/essderc.2007.4430964 Characterization and modeling of long term retention in SONOS non volatile memories
https://doi.org/10.1007/s12095-018-0317-2 Decomposition of permutations in a finite field
https://doi.org/10.1109/iedm.2008.4796744 Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices
https://doi.org/10.1149/1.2908818 Investigation on Molybdenum and Its Conductive Oxides as p-Type Metal Gate Candidates
https://doi.org/10.1063/1.2917797 Dielectric constant boost in amorphous sesquioxides
https://doi.org/10.1109/iitc.2007.382349 Multi-Level Air Gap Integration for 32/22nm nodes using a Spin-on Thermal Degradable Polymer and a SiOC CVD Hard Mask
https://doi.org/10.1063/1.2870078 Te-induced modulation of the Mo∕HfO2 interface effective work function
https://doi.org/10.1063/1.3020520 Photoconductivity of Hf-based binary metal oxide systems
https://doi.org/10.1109/led.2007.892366 On the Use of a SiGe Spike in the Emitter to Improve the $f_{T}\hbox{xBV}_{\rm CEO}$ Product of High-Speed SiGe HBTs
https://doi.org/10.46586/tosc.v2017.i1.398-404 A Note on 5-bit Quadratic Permutations’ Classification
https://doi.org/10.1109/icicdt.2007.4299542 Four-Terminal FinFET Device Technology
https://doi.org/10.1116/1.2831490 Ultrashallow junctions formed by C coimplantation with spike plus submelt laser annealing
https://doi.org/10.1109/sensor.2009.5285812 56 MHZ piezoresistive micromechanical oscillator
https://doi.org/10.1109/sips.2015.7344998 Max-log demapper architecture design for DVB-T2 rotated QAM constellations
https://doi.org/10.1109/bctm.2011.6082773 SiGe:C profile optimization for low noise performance
https://doi.org/10.1103/physrevb.76.104112 Conservation of dielectric constant upon amorphization in perovskite oxides
https://doi.org/10.1007/s13389-019-00214-6 Faster modular arithmetic for isogeny-based crypto on embedded devices
https://doi.org/10.1017/s1431927610000176 Growth Rate Determination through Automated TEM Image Analysis: Crystallization Studies of Doped SbTe Phase-Change Thin Films
https://doi.org/10.1109/sensor.2009.5285837 Piezoresistive ring-shaped MEMS resonator
https://doi.org/10.1007/978-3-662-44709-3_19 Cofactorization on Graphics Processing Units
https://doi.org/10.1504/ijact.2017.10010312 Sieving for shortest vectors in ideal lattices: a practical perspective
https://doi.org/10.1116/1.3432119 Erratum: “Experimental studies of dose retention and activation in fin field-effect-transistor-based structures” [J. Vac. Sci. Technol. B 28, C1H5 (2010)]
https://doi.org/10.1109/icmts.2013.6528156 Comparison of electrical techniques for temperature evaluation in power MOS transistors
https://doi.org/10.1016/j.sse.2009.03.017 Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering
https://doi.org/10.5281/zenodo.58086 Higher-Order Threshold Implementation Of The Aes S-Box
https://doi.org/10.1007/978-3-319-93387-0_20 MergeMAC: A MAC for Authentication with Strict Time Constraints and Limited Bandwidth
https://doi.org/10.1109/iwasi.2013.6576088 On the response of nanoelectrode capacitive biosensors to DNA and PNA strands
https://doi.org/10.1109/iedm.2017.8268459 Novel 5V-EDMOS transistor with a record /max of 450 GHz in a baseline 40nm CMOS technology
https://doi.org/10.1007/978-3-031-58868-6_17 SoK: Parameterization of Fault Adversary Models Connecting Theory and Practice
https://doi.org/10.1021/nl062681n Breakdown Enhancement in Silicon Nanowire p-n Junctions