Publications in OpenAlex of which a co-author is affiliated to this organization
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| Title | DOI |
|---|---|
| https://doi.org/10.1016/j.mee.2006.10.017 | Study of silicide contacts to SiGe source/drain |
| https://doi.org/10.1109/ted.2007.914843 | Factors Influencing the Leakage Current in Embedded SiGe Source/Drain Junctions |
| https://doi.org/10.1109/led.2008.919780 | Electrical Properties of Low-$V_{T}$ Metal-Gated n-MOSFETs Using $\hbox{La}_{2}\hbox{O}_{3}/\hbox{SiO}_{x}$ as Interfacial Layer Between HfLaO High-$\kappa$ Dielectrics and Si Channel |
| https://doi.org/10.2340/00015555-0494 | Efficacy of a Single Oral Dose of 200 mg Pramiconazole in Vulvovaginal Yeast Infections: An Exploratory Phase IIa Trial |
| https://doi.org/10.1016/j.tsf.2008.08.139 | Low temperature epitaxy and the importance of moisture control |
| https://doi.org/10.1016/j.mssp.2008.09.013 | Stress analysis of Si1−xGex embedded source/drain junctions |
| https://doi.org/10.1109/vlsit.2002.1015448 | Thermal stability and scalability of Zr-aluminate-based high-k gate stacks |
| https://doi.org/10.1109/essder.2004.1356543 | Reliability of embedded SONOS memories |
| https://doi.org/10.1557/proc-487-411 | New Generations of Position Sensitive Silicon Detectors |
| https://doi.org/10.1557/proc-765-d2.6 | High-k Materials for Advanced Gate Stack Dielectrics: a Comparison of ALCVD and MOCVD as Deposition Technologies |
| https://doi.org/10.1149/1.2356267 | 3D Pattern Effects in RTA Radiative vs Conductive Heating |
| https://doi.org/10.1109/irps.2009.5173297 | Time and temperature dependence of early stage Stress-Induced-Voiding in Cu/low-k interconnects |
| https://doi.org/10.1149/1.2209332 | LEIS Study of ALD WN<em>x</em>C<em>y</em> Growth on Dielectric Layers |
| https://doi.org/10.1557/proc-745-n5.11 | ALD HfO2 surface preparation study |
| https://doi.org/10.1016/j.mee.2009.06.019 | Electrical demonstration of thermally stable Ni silicides on Si1−xCx epitaxial layers |
| https://doi.org/10.1016/j.apsusc.2008.02.138 | Leakage current study of Si1−xCx embedded source/drain junctions |
| https://doi.org/10.1557/proc-745-n5.3 | Physical-Chemical Evolution upon Thermal Treatments of Al2O3, HfO2 and Al/Hf Composite Materials Deposited by ALCVD™ |
| https://doi.org/10.1016/j.tsf.2009.10.071 | Stability of silicon germanium stressors |
| https://doi.org/10.1109/issm.2001.962998 | Gate stack preparation with high-k materials in a cluster tool |
| https://doi.org/10.1149/1.2779086 | Atomic Layer Deposition of Hafnium Based Gate Dielectric Layers for CMOS Applications |
| https://doi.org/10.1149/1.2779084 | ALD La-Based Oxides for Vt-Tuning in High-K/Metal Gate Stacks |
| https://doi.org/10.23919/vlsit.2017.7998192 | First demonstration of ∼3500 cm2/V-s electron mobility and sufficient BTI reliability (max V<inf>ov</inf> up to 0.6V) In<inf>0.53</inf>Ga<inf>0.47</inf>As nFET using an IL/LaSiO<inf>x</inf>/HfO<inf>2</inf> gate stack |
| https://doi.org/10.1109/iwgi.2003.159172 | Implementation of high-k gate dielectrics - a status update |
| https://doi.org/10.1109/rtp.2007.4383834 | Thermal Stability of Pt and C-Doped NiSi Films |
| https://doi.org/10.1149/ma2012-02/31/2598 | Current Status of High-k and Metal Gates in CMOS |
| https://doi.org/10.1149/1.2721474 | Radical-Assisted Silcore(R)CVD of Si3N4 and SiO2 Nanolaminates |
| https://doi.org/10.1149/1.3205061 | Extreme Scaled Gate Dielectrics By Using ALD HfO2/SrTiO3 Composite Structures |
| https://doi.org/10.1109/ted.2017.2693211 | The Improvement of Subthreshold Slope and Transconductance of p-Type Bulk Si Field-Effect Transistors by Solid-Source Doping |
| https://doi.org/10.1007/978-3-030-44041-1_61 | A Flexible and Interpretable Framework for Predicting Anomalous Behavior in Industry 4.0 Environments |
| https://doi.org/10.1149/ma2020-02241734mtgabs | Investigation of Low Temperature SiP Epitaxy on 300 mm Si Substrate |
| https://doi.org/10.1149/ma2007-02/17/997 | ALD La-Based Oxides for Vt-Tuning in High-K/Metal Gate Stacks |
| https://doi.org/10.1149/ma2008-02/24/1890 | Batch Atomic Layer Deposition of HfO2 and ZrO2 Films Using Cyclopentadienyl Precursors |
| https://doi.org/10.4028/www.scientific.net/ssp.219.20 | HF-Last Wet Clean in Combination with a Low Temperature GeH<sub>4</sub>-Assisted HCl <i>In Situ</i> Clean Prior to Si<sub>0.8</sub>Ge<sub>0.2</sub>-on-Si Epitaxial Growth |
| https://doi.org/10.1109/imw.2013.6582123 | Vertical polysilicon Pinch-Off FET for 3D memory technology: Feasibility and electrical performance |
| https://doi.org/10.1117/12.837495 | Litho scenario solutions for FinFET SRAM 22nm node |
| https://doi.org/10.4028/www.scientific.net/ssp.219.16 | Catalyst Assisted Low Temperature Pre Epitaxial Cleaning for Si and SiGe Surfaces |
| https://doi.org/10.1143/jjap.49.05fd03 | Integration of Porogen-Based Low-k Films: Influence of Capping Layer Thickness and Long Thermal Anneals on Low-k Damage and Reliability |
| https://doi.org/10.1149/1.2209299 | Evaluation of Nb(Si)N as Metal Gate Material |
| https://doi.org/10.25046/aj030506 | On The Development of a Reliable Gate Stack for Future Technology Nodes Based on III-V Materials |
| https://doi.org/10.1117/12.2536943 | Large area EUV via yield analysis for single damascene process: voltage contrast, CD and defect metrology (Conference Presentation) |
| https://doi.org/10.1117/12.2585681 | Oxides based resistive switching memories |
| https://doi.org/10.1149/ma2007-02/20/1119 | Impact of Hf-Precursor Choice on Scaling and Performance of High-K Gate Dielectrics |
| https://doi.org/10.7567/jjap.51.05ec04 | Impact of Hydrocarbon Control in Ultraviolet-Assisted Restoration Process for Extremely Porous Plasma Enhanced Chemical Vapor Deposition SiOCH Films withk= 2.0 |
| https://doi.org/10.1149/ma2016-02/30/2003 | (Invited) Selective Epitaxial Growth of High-P Si:P for Source/Drain Formation in Advanced Si nFETs |
| https://doi.org/10.1117/12.2642867 | Curvilinear EUV mask: development of innovative mask metrology |
| https://doi.org/10.1117/12.2661307 | Evaluation of TiN hardmask films to prevent line wiggling due to plasma-induced film stress |
| https://doi.org/10.1109/vlsitechnologyandcir46783.2024.10631469 | First Demonstration of Superconducting Nb Contact on Heavily-Doped Group IV Semiconductor |
| https://doi.org/10.1117/12.3035360 | Benefits of using advanced sub-resolution features for 0.55NA brightfield imaging |
| https://doi.org/10.1117/12.474610 | 157-nm technology: Where are we today? |
| https://doi.org/10.1109/rtp.2007.4383832 | Pattern-Dependent Heating of 3D Structures |
| https://doi.org/10.1016/j.microrel.2004.11.048 | Potential remedies for the VT/Vfb-shift problem of Hf/polysilicon-based gate stacks: a solution-based survey |
| https://doi.org/10.1063/1.2177375 | Exoelectron emission from silicon nanocrystals |
| https://doi.org/10.1063/1.2401490 | Simplifying the 45nm SDE Process with ClusterBoron® and ClusterCarbon™ Implantation |
| https://doi.org/10.1149/1.2778649 | Analysis of the Pre-epi Bake Conditions on the Defect Creation in Recessed SiGe S/D Junctions |
| https://doi.org/10.1557/proc-0917-e11-04 | Highly Scalable ALD-deposited Hafnium Silicate Gate Stacks for Low Standby Power Applications |
| https://doi.org/10.1557/proc-745-n2.3 | Effect of Al-content and Post Deposition Annealing on the Electrical Properties of Ultra-thin HfAlxOy Layers |
| https://doi.org/10.1117/12.608499 | <title>SIGEM, low-temperature deposition of poly-SiGe MEMs structures on standard CMOS circuits (Invited Paper)</title> |
| https://doi.org/10.1117/12.474250 | Progress in 157-nm resist performance and potential |
| https://doi.org/10.1109/iitc.2006.1648641 | Low-k properties and integration processes enabling reliable interconnect scaling to the 32 nm technology node |
| https://doi.org/10.1002/pssc.200881457 | Influence of the strain‐relaxation induced defect creation on the leakage current of embedded Si1–xGex source/drain junctions |
| https://doi.org/10.1016/j.mee.2009.06.036 | Variation in process conditions of porogen-based low-k films: A method to improve performance without changing existing process steps in a sub-100nm Cu damascene integration route |
| https://doi.org/10.1109/iwjt.2007.4279969 | Emissivity independent heating of 3D patterns |
| https://doi.org/10.1557/proc-830-d6.1 | Improved size dispersion of silicon nanocrystals grown in a batch LPCVD reactor |
| https://doi.org/10.1109/essder.2004.1356494 | Work function stability of thermal ALD Ta(Si)N gate electrodes on HfO/sub 2/ [CMOS device applications] |
| https://doi.org/10.1109/iitc.2002.1014956 | Deposition of Cu barrier and seed layers with atomic layer control |
| https://doi.org/10.1117/12.436849 | Process optimization for sub-100-nm gate patterns using phase edge lithography |
| https://doi.org/10.1587/transele.e96.c.699 | Nonvolatile Polymer Memory-Cell Embedded with Ni Nanocrystals Surrounded by NiO in Polystyrene |
| https://doi.org/10.1149/1.3203956 | On the Low-frequency Noise Performance of Embedded Si:C nMOSFETs |
| https://doi.org/10.4028/www.scientific.net/ssp.131-133.95 | Influence of the Highly-Doped Drain Implantation and the Window Size on Defect Creation in p<sup>+</sup>/n Si<sub>1-X</sub>Ge<sub>x</sub> Source/Drain Junctions |
| https://doi.org/10.1149/1.3360696 | On the Process and Material Sensitivities for High-k Based Dielectrics |
| https://doi.org/10.1149/ma2006-02/20/1018 | Low Temperature Silcore a-Silicon Deposition |
| https://doi.org/10.1557/proc-765-d2.10 | Physical-Chemical Evolution of Hf-aluminates upon Thermal Treatments |
| https://doi.org/10.1149/06907.0119ecst | (Invited) ALD Materials for the Integration of III-V Based Transistors |
| https://doi.org/10.1149/1.3205059 | Atomic Layer Deposition of GdHfOx Thin Films |
| https://doi.org/10.1149/1.2779585 | A Morphological, Chemical and Electrical Study of HfSiON Films for Inter Poly Dielectric Applications in Flash Memories |
| https://doi.org/10.1149/ma2005-02/12/463 | LEIS Study of ALD WNxCy on Dielectric Layers |
| https://doi.org/10.1149/ma2008-02/24/1915 | Atomic Layer Deposition of Hf-based Materials in Semiconductor Applications |
| https://doi.org/10.1149/ma2009-02/23/2035 | Atomic Layer Deposition of GdAlOx and GdHfOx Using Gd(iPr-Cp)3 |
| https://doi.org/10.7567/ssdm.2014.e-1-2 | Combined PEALD Gate-Dielectric and In-Situ SiN Cap-Layer for Reduced V<sub>th</sub> Shift and R<sub>DS-ON</sub> Dispersion of AlGaN/GaN HEMTs on 200 mm Si Wafer |
| https://doi.org/10.1149/ma2010-02/22/1523 | LaHfOx Films Analyses for NVM Applications |
| https://doi.org/10.1117/12.2258040 | Exploration of a low-temperature PEALD technology to trim and smooth 193i photoresist |
| https://doi.org/10.1149/ma2009-02/23/2037 | Extreme Scaled Gate Dielectrics by using ALD Hf-based Composite Materials |
| https://doi.org/10.1109/ulis.2017.7962599 | Feasibility demonstration of new e-NVM cells suitable for integration at 28nm |
| https://doi.org/10.1117/12.2281623 | EUV exposure tool stability at IMEC (Conference Presentation) |
| https://doi.org/10.1016/j.resuscitation.2019.12.034 | Reply to Chest-compression-only after drowning: A call for more research |
| https://doi.org/10.1149/ma2020-02241732mtgabs | B and Ga Co-Doping in Epitaxial SiGe: Challenges and Opportunities |
| https://doi.org/10.1117/12.2584807 | Electrical validation of massive E-beam defect metrology in EUV-patterned interconnects |
| https://doi.org/10.1117/12.2583870 | NXE:3400 OPC process monitoring: model validity vs process variability |
| https://doi.org/10.1109/istdm.2006.246508 | Highly Tensile Strained Silicon Carbon Phosphorus Alloys Epitaxially Grown into Recessed Source Drain Areas of NMOS devices |
| https://doi.org/10.7567/ssdm.2019.h-1-04 | Improvement of HRS Variability in OxRRAM by Tailored Metallic Liner |
| Ultra-low Specific Contact Resistivity (3.2×10 -10 Ω-cm 2 ) of Ti/Si 0.5 Ge 0.5 Contact: Deep Insights into the Role of Interface Reaction and Ga Co-doping | |
| https://doi.org/10.1117/12.2600937 | 28nm-pitch Ru interconnects patterned with a 0.33NA-EUV single exposure |
| https://doi.org/10.1117/12.2601587 | Contour-based variability decomposition for stochastic band metrology |
| https://doi.org/10.1117/12.2600938 | iN5 EUV single expose patterning evaluation for via layers |
| https://doi.org/10.1149/osf.io/3fvqn | #AiMES2018_20181002_1400_Low-T-SiGe_Porret |
| https://doi.org/10.1149/ma2007-02/20/1160 | A Morphological, Chemical and Electrical Study of HfSiON Films Properties for Interpoly Dielectric Applications in Flash Memories |
| https://doi.org/10.1149/ma2006-02/20/1005 | 3D Pattern Effects in RTA Radiative vs Conductive Heating |
| https://doi.org/10.1149/ma2007-02/19/1097 | Analysis of the Pre-epi Bake Conditions on the Defect Creation in Recessed SiGe S/D Junctions |
| https://doi.org/10.1149/ma2014-02/35/1855 | Characterization of Epitaxial Si:C:P and Si:P Layers for Source/Drain Formation in Advanced Bulk FinFETs |
| https://doi.org/10.1149/ma2007-02/17/999 | Atomic Layer Deposition of Hafnium Based Gate Dielectric Layers for CMOS Applications |